document number: 93748 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 thyristor/diode and thyristor/thyristor (super magn-a-pak power modules), 430 a vsk.430..pbf series vishay semiconductors features ? high current capability ? high surge capability ? high voltage ratings up to 2000 v ? 3000 v rms isolating voltage with non-toxic substrate ? industrial standard package ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec typical applications ? motor starters ? dc motor controls - ac motor controls ? uninterruptable power supplies ? wind mill electrical specifications product summary i t(av) 430 a super magn-a-pak major ratings and characteristics symbol characteristics values units i t(av) 82 c 430 a i t(rms) 675 a t c 82 c i tsm 50 hz 15.7 ka 60 hz 16.4 i 2 t 50 hz 1232 ka 2 s 60 hz 1125 i 2 ? t 12 320 ka 2 ? s v rrm range 1600 to 2000 v t j range - 40 to 150 c t stg - 40 to 130 voltage ratings type number voltage code v rrm /v drm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm maximum at t j = t j maximum ma vsk.430.. 16 1600 1700 100 18 1800 1900 20 2000 2100
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93748 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vsk.430..pbf series vishay semiconductors thyristor/diode and thyristor/thyristor (super magn-a-pak po wer modules), 430 a on-state conduction parameter symbol test conditions values units maximum average on-state current at case temperature i t(av), i f(av) 180 conduction, half sine wave 430 a 82 c maximum rms on-state current i t(rms) 180 conduction, half sine wave at t c = 82 c 675 a maximum peak, one-cycle, non-repetitive surge current i tsm, i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 15.7 ka t = 8.3 ms 16.4 t = 10 ms 100 % v rrm reapplied 13.2 t = 8.3 ms 13.8 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 1232 ka 2 s t = 8.3 ms 1125 t = 10 ms 100 % v rrm reapplied 871 t = 8.3 ms 795 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 12 320 ka 2 ? s low level value of threshold voltage v f(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.96 v high level value of threshold voltage v f(to)2 (i > ? x i t(av) ), t j = t j maximum 1.06 low level value of on-state slope resistance r f1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.51 m ? high level value of on-state slope resistance r f2 (i > ? x i t(av) ), t j = t j maximum 0.45 maximum on-state voltage drop v tm i pk = 1500 a, t j = 25 c, t p = 10 ms sine pulse 1.65 v maximum forward voltage drop v fm i pk = 1500 a, t j = 25 c, t p = 10 ms sine pulse 1.65 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 500 ma typical latching current i l 1000 switching parameter symbol test conditions values units maximum rate of rise of turned-on current di/dt t j = t j maximum, i tm = 400 a, v drm applied 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 2.0 s typical turn-off time t q i tm = 750 a, t j = t j maximum, di/dt = - 60 a/s v r = 50, dv/dt = 20 v/s, gate 0 v 100 ? 200 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = 130 c, linear to v d = 80 % v drm 1000 v/s rms insulation voltage v ins t = 1 s 3000 v maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm/ v rrm applied 100 ma
document number: 93748 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vsk.430..pbf series thyristor/diode and thyristor/thyristor (super magn-a-pak power modules), 430 a vishay semiconductors note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 to 130 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to ca se per junction r thjc dc operation 0.065 k/w maximum thermal resistance, case to heatsink r thc-hs 0.02 mounting torque 10 % smap to heatsink a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 6 to 8 nm busbar to smap 12 to 15 approximate weight 1500 g case style see dimensions - link at the end of datasheet super magn-a-pak ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.009 0.006 t j = t j maximum k/w 120 0.011 0.011 90 0.014 0.015 60 0.021 0.022 30 0.037 0.038
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93748 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vsk.430..pbf series vishay semiconductors thyristor/diode and thyristor/thyristor (super magn-a-pak po wer modules), 430 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 70 80 90 100 110 120 130 010020030040050 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle vsk.430..pbf series r (dc) = 0.065 k/w th jc 70 80 90 100 110 120 130 010020030040050060070 0 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c ) conduction period vsk.430..pbf series r (dc) = 0.065 k/w thjc 0 100 200 300 400 500 600 700 01002003004005 00 rms limit conduction angle 180 120 90 60 30 maximum average on-state power loss (w) average on-state current (a) vsk.430..pbf series per junction t = 130c j 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 70 0 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) vsk.430..pbf series per junction t = 130c j 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 11010 0 number of equal amplitude half cycle c urrent pulses (n) peak half sine wave on-state current (a) in itial t = 130 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rat ed v a pplied following s ur ge . rrm vsk.430..pbf series per junction 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 0.01 0.1 1 peak half sine wave on-state current (a ) pulse train duration (s) maximum no n repetitive surge curren t versus pulse train duration. control of conduction may not be maintained . initial t = 130c no voltage reapplied rated v reapplied rrm j vsk.430..pbf series per junction
document number: 93748 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vsk.430..pbf series thyristor/diode and thyristor/thyristor (super magn-a-pak power modules), 430 a vishay semiconductors fig. 7 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 9 - on-state power loss characteristics 0 20406080100120 maximum allowable ambient temperature ( c ) r = 0 . 0 5 k / w - d e l t a r t h s a 0 . 0 9 k / w 0 . 1 2 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 6 k/ w 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 180 120 90 60 30 total rms output current (a) maximum total on-state power loss (w ) conduction angle vsk.430..pbf series per m odule t = 130c j 020406080100120 maximum allowable ambient temperature (c ) r = 1 k / w - d e l t a r t h s a 1 . 5 k / w 2 k / w 3 k / w 5 k / w 10 k/ w 1 5 k / w 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 600 700 800 900 total output curren t (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x vsk.430..pbf series single phase bridge connected t = 130 c j 0 20406080100120 maximum allowable ambient temperature (c) r = 0 . 0 0 5 k / w - d e l t a r t h s a 0 . 0 1 k / w 0 . 0 2 k / w 0 . 0 3 k / w 0 . 0 5 k / w 0 . 1 k / w 0 . 2 k / w 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 200 400 600 800 1000 1200 1400 total output current (a) maximum total power loss (w) 120 (rect) 3 x vsk.430..pbf series three phase bridge connected t = 130c j
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93748 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vsk.430..pbf series vishay semiconductors thyristor/diode and thyristor/thyristor (super magn-a-pak po wer modules), 430 a fig. 10 - on-state voltage drop characteristics fig. 11 - thermal impedance z thjc characteristics fig. 12 - gate characteristics ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 100 1000 10000 0.511.522.533 .5 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 130c j vsk.430..pbf series per junction 0.001 0.01 0.1 0.001 0.01 0.1 1 10 10 0 square wave pulse duration (s) thjc tr an sient thermal i mpedance z (k/w) vsk.430..pbf series per junction steady state value: r = 0.065 k/w (dc operation) thjc 0.1 1 10 100 0.001 0.01 0.1 1 10 10 0 vgd igd (b) (a) tj=25 c tj=-40 c (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms rectangular gate pulse vsk.430..pbf series frequency limited by pg(av) tj=130 c (4) device code 1 - module type 2 - circuit configuration (see end of datasheet) 3 - current rating 4 - voltage code x 100 = v rrm (see voltage ratings table) 5 - lead (pb)-free 4 13 2 5 vsk t 430 - 20 pbf
document number: 93748 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 vsk.430..pbf series thyristor/diode and thyristor/thyristor (super magn-a-pak power modules), 430 a vishay semiconductors circuit configuration links to related documents dimensions www.vishay.com/doc?95283 + 7 (k2) 6(g2) - 4 (k1) 5(g1) ~ 1 2 3 + 7(k2) 6(g2) - ~ 1 2 3 + - 4(k1) 5(g1) ~ 1 2 3 vskt... vskh... vskl...
document number: 95283 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 20-mar-08 1 super magn-a-pak thyristor/diode outline dimensions vishay semiconductors dimensions in millimeters (inches) 52 (2.05) 60.0 (2.36) 48.0 (1.89) 31.0 (1.22) 50.0 (1.97) 44.0 (1.73) m10 fast-on tabs 2.8 x 0.8 (0.11 x 0.03) 20.1 (0.78) 36.4 (1.14) 4.5 (0.20) 54 6 5, 6 = gate 4, 7 = cathode 7 28.0 (1.10) 26.0 (0.98) 26.0 (0.98) 112.0 (4.41) 124.0 (4.88) 149.0 (5.67) 1.0 (0.039) 32 1
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